Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices

Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devices – conductive bridge random access memory (CBRAM). To understand the nature of the effects occurring in these devices under influence of electron-beam radiation, the interaction of blanked chalcogenide films and nanostructured films containing chalcogenide glass and silver (Ag) source are studied. Raman spectroscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction are used for establishing the structural and compositional effects occurring under radiation. They have strong compositional dependence with the stoichiometric compositions being most stable showing less structural changes after radiation. These effects are associated with the availability of lone-pair electrons, their participation in the bonding configurations and the coupling of electron states in the bandgap. They are further enhanced in the bilayers by silver diffusion in the chalcogenide matrix, as a result of interaction with electrons. These effects are used to interpret the electrical performance of CBRAM devices after radiation. The devices are characterized by their resistance states, threshold voltage and endurance. Those based on selenium-rich and stoichiometric composition undergo continuous parameters changes with increase in the radiation dose while in the devices based on germanium-rich composition a counter play of the structural changes and expulsion of silver occur.